Compound semiconductor(LED, power devices)
- Product Info
- Technical Data
Overview
Graphite materials with silicon carbide coat for components in the inside of industrial furnaces for the manufacturing of silicon semi-conductors, compound semi-conductors, glass fibre etc.
Characteristics
Fluctuations
Since the fluctuations of the inner side of the material are low, an even distribution of heat is ensured. This way a use in the field of epitaxial growth is possible.
Functions
The coating is homogenous and hard to remove, in-plane fluctuations are low, thus high quality wafers can be manufactured.
Link to related technology
